NE3517S03-T1D-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE3517S03-T1D-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: GALLIUM ARSENIDE;
Datasheet	NE3517S03-T1D-A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.015 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.165 W
Terminal Position:	UNSPECIFIED
Package Style (Meter):	MICROWAVE
JESD-30 Code:	R-PXMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	K BAND
Maximum Operating Temperature:	125 Cel
Minimum Power Gain (Gp):	11.5 dB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

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