Renesas Electronics - NE552R479A-A

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NE552R479A-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE552R479A-A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: QUAD;
Datasheet NE552R479A-A Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .3 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 15 V
Terminal Position: QUAD
Package Style (Meter): MICROWAVE
JESD-30 Code: R-CQMW-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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