Renesas Electronics - NE6501077

  1. Home
  2. Renesas Electronics - NE6501077
NE6501077 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE6501077
Description N-CHANNEL; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: 50 W; Maximum Drain Current (Abs) (ID): 9 A; Maximum Drain Current (ID): 9 A;
Datasheet NE6501077 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 9 A
Maximum Drain Current (Abs) (ID): 9 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: 50 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

PD57006-01 by STMicroelectronics

PD57006-01

STMicroelectronics

PD57006-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at up to 1A drain current, and supports ultra-high frequency bands. Ideal for compact, high-performance circuits in various electronic devices.
MRF1570FNT1 by Freescale Semiconductor

MRF1570FNT1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
MRFE6VP61K25HR5 by NXP Semiconductors

MRFE6VP61K25HR5

NXP Semiconductors

NXP Semiconductors' MRFE6VP61K25HR5 is a N-CHANNEL RF Power FET with 1300W power dissipation. Utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 225°C. Ideal for high-power RF applications requiring efficient signal amplification.
PD57006S by STMicroelectronics

PD57006S

STMicroelectronics

PD57006S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology for efficient integration.
CGH40025P by Wolfspeed

CGH40025P

Wolfspeed

CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.
MRF1570FNT1 by NXP Semiconductors

MRF1570FNT1

NXP Semiconductors

NXP Semiconductors' MRF1570FNT1 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It features a common source configuration, with a max power dissipation of 165W and a min DS breakdown voltage of 40V. Ideal for amplifier applications, this transistor has a package style of flange mount and operates in enhancement mode at temperatures up to 200°C.
ST50V10100 by STMicroelectronics

ST50V10100

STMicroelectronics

RF Power Field-Effect Transistors;
CGHV40200PP by Wolfspeed

CGHV40200PP

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
PD85004 by STMicroelectronics

PD85004

STMicroelectronics

STMicroelectronics PD85004 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a plastic/epoxy package, flat terminals, and can handle up to 6W power dissipation at 150°C.
A5G37H110NT4 by NXP Semiconductors

A5G37H110NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL;
934064628112 by NXP Semiconductors

934064628112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
MRF6522-70 by New Jersey Semiconductor Products

MRF6522-70

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
CGH40045F by Wolfspeed

CGH40045F

Wolfspeed

CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.
934065122112 by NXP Semiconductors

934065122112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
MRF6VP2600HR6 by Freescale Semiconductor

MRF6VP2600HR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
D1020UK by Tt Electronics Plc

D1020UK

Tt Electronics Plc

D1020UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a max ID of 25A and a 200°C operating temperature. Commonly used as an amplifier, it has a metal-oxide semiconductor technology and gold terminal finish for high-performance applications.
PD85006TR-E by STMicroelectronics

PD85006TR-E

STMicroelectronics

STMicroelectronics PD85006TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 36.5W Power Dissipation, ENHANCEMENT MODE operation, and GULL WING terminals for surface mounting.
A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
FLL57MK by Eudyna Devices

FLL57MK

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND; Operating Mode: DEPLETION MODE;
PD60030S by STMicroelectronics

PD60030S

STMicroelectronics

PD60030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.