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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | NE71383B |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: QUAD; Maximum Drain Current (Abs) (ID): .12 A; |
Datasheet | NE71383B Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 8 dB |
Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .03 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Tin/Lead (Sn/Pb) |
JESD-609 Code: | e0 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 5 V |
Terminal Position: | QUAD |
Package Style (Meter): | MICROWAVE |
JESD-30 Code: | O-XQMW-F4 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | KU BAND |
Maximum Operating Temperature: | 175 Cel |
Maximum Drain Current (Abs) (ID): | .12 A |
Maximum Power Dissipation Ambient: | .27 W |