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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE71383B |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: QUAD; Maximum Drain Current (Abs) (ID): .12 A; |
| Datasheet | NE71383B Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 8 dB |
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .03 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 5 V |
| Terminal Position: | QUAD |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | O-XQMW-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | KU BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | .12 A |
| Maximum Power Dissipation Ambient: | .27 W |
