Renesas Electronics - NES1823M-240-A

  1. Home
  2. Renesas Electronics - NES1823M-240-A
NES1823M-240-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NES1823M-240-A
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: JUNCTION;
Datasheet NES1823M-240-A Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 4
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Additional Features: HIGH RELIABILITY
Highest Frequency Band: S BAND
Case Connection: SOURCE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MRF141G by Motorola

MRF141G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Power Dissipation Ambient: 500 W; Operating Mode: ENHANCEMENT MODE;
A2I25D025NR1 by NXP Semiconductors

A2I25D025NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;
STAC2932FW by STMicroelectronics

STAC2932FW

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934061525112 by NXP Semiconductors

934061525112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;
BLF177 by NXP Semiconductors

BLF177

NXP Semiconductors

BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.
934061249112 by NXP Semiconductors

934061249112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
BLF6G27S-45,112 by Ampleon Netherlands B V

BLF6G27S-45,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): FLATPACK; Terminal Form: FLAT;
D2003UK by Tt Electronics Plc

D2003UK

Tt Electronics Plc

D2003UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, it has a max Drain Current of 1A and can withstand temperatures up to 200°C.
ST24180 by STMicroelectronics

ST24180

STMicroelectronics

RF Power Field-Effect Transistors;
PD57018S by STMicroelectronics

PD57018S

STMicroelectronics

STMicroelectronics PD57018S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Operating in the Ultra High Frequency Band, it has a max Drain Current of 2.5A and can handle up to 31.7W power dissipation. Ideal for amplifier applications due to its small outline package style and source case connection.
MRF6522-70 by Motorola

MRF6522-70

Motorola

MRF6522-70 by Motorola is an N-channel RF Power FET with 65V DS breakdown voltage, suitable for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 7A and can withstand temperatures up to 200°C. The transistor features a ceramic-metal sealed co-fired package and is designed for surface mount installation.
PTFA080551FV4R250XTMA1 by Infineon Technologies

PTFA080551FV4R250XTMA1

Infineon Technologies

Infineon's PTFA080551FV4R250XTMA1 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a CERAMIC/METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE at up to 200°C.
934061296112 by NXP Semiconductors

934061296112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
934065696112 by NXP Semiconductors

934065696112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLATPACK; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F4;
A5G35H110NT4 by NXP Semiconductors

A5G35H110NT4

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
CGHV96130F by Wolfspeed

CGHV96130F

Wolfspeed

RF Power Field-Effect Transistors;
PD85025TR-E by STMicroelectronics

PD85025TR-E

STMicroelectronics

PD85025TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
STAC4932F by STMicroelectronics

STAC4932F

STMicroelectronics

STAC4932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min breakdown voltage, operates in the ultra-high frequency band, and supports surface mount technology. With a max temp of 200 °C, it's ideal for high-performance circuits.
CGH40025P by Wolfspeed

CGH40025P

Wolfspeed

CGH40025P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can withstand temperatures up to 175°C.
CGHV59350F by Wolfspeed

CGHV59350F

Wolfspeed

CGHV59350F by Wolfspeed is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Power Gain of 11.5 dB, ideal for amplifier applications in the C BAND frequency range. This HIGH ELECTRON MOBILITY transistor operates in DEPLETION MODE, with a max Drain Current of 24A and can withstand temperatures from -40 to 125 °C.