Renesas Electronics - NES1823S-45-A

  1. Home
  2. Renesas Electronics - NES1823S-45-A
NES1823S-45-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NES1823S-45-A
Description RF Power Field-Effect Transistors;
Datasheet NES1823S-45-A Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

PD57018STR-E by STMicroelectronics

PD57018STR-E

STMicroelectronics

PD57018STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2.5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance in demanding environments.
BLF246B,112 by NXP Semiconductors

BLF246B,112

NXP Semiconductors

NXP Semiconductors BLF246B,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 14dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 130W and operates in enhancement mode up to 200°C.
ST36015 by STMicroelectronics

ST36015

STMicroelectronics

RF Power Field-Effect Transistors;
PD85015STR-E by STMicroelectronics

PD85015STR-E

STMicroelectronics

PD85015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
LET9045TR by STMicroelectronics

LET9045TR

STMicroelectronics

LET9045TR by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates at up to 165 °C. Its compact surface mount design ensures efficient performance in various electronic devices.
FLL177ME by Fujitsu Semiconductor America

FLL177ME

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;
RF3L05250CB4 by STMicroelectronics

RF3L05250CB4

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
934064686118 by NXP Semiconductors

934064686118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
LET16060C by STMicroelectronics

LET16060C

STMicroelectronics

LET16060C by STMicroelectronics is a N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, 12A Drain Current, and 100W Power Dissipation. It's used in L BAND applications as an amplifier in enhancement mode operation.
SD60030 by STMicroelectronics

SD60030

STMicroelectronics

SD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L-band frequencies. This surface-mount transistor ensures high performance up to 200 °C.
PTVA101K02EVV1 by Infineon Technologies

PTVA101K02EVV1

Infineon Technologies

RF Power Field-Effect Transistors;
SD2942 by STMicroelectronics

SD2942

STMicroelectronics

SD2942 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and can dissipate up to 500 W. Ideal for high-performance RF amplification in compact designs.
934061129118 by NXP Semiconductors

934061129118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T07H310-24SR6 by NXP Semiconductors

A2T07H310-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLF878,112 by NXP Semiconductors

BLF878,112

NXP Semiconductors

NXP Semiconductors BLF878,112 is an N-CHANNEL RF Power FET with 2 elements for AMPLIFIER applications. It operates in the ULTRA HIGH FREQUENCY BAND, with a max power dissipation of 300W and a min DS breakdown voltage of 89V. The package style is FLANGE MOUNT, suitable for surface mount assembly at a max temp of 200°C.
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;
PD55015S by STMicroelectronics

PD55015S

STMicroelectronics

PD55015S by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 5A and a max power dissipation of 73W.
PD57006-E by STMicroelectronics

PD57006-E

STMicroelectronics

PD57006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 150 °C.
D2225UK by Tt Electronics Plc

D2225UK

Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.