Renesas Electronics - NP36N055HLE-AY

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NP36N055HLE-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP36N055HLE-AY
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NP36N055HLE-AY Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 120 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 36 A
Maximum Drain Current (Abs) (ID): 36 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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