NP36N055HLE-AZ by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NP36N055HLE-AZ
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): 10; Peak Reflow Temperature (C): 260;
Datasheet	NP36N055HLE-AZ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	36 A
Maximum Pulsed Drain Current (IDM):	144 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	120 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.018 ohm
Avalanche Energy Rating (EAS):	108 mJ
JEDEC-95 Code:	TO-251
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	36 A
Peak Reflow Temperature (C):	260

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