Renesas Electronics - NP36N055SLE-AZ

  1. Home
  2. Renesas Electronics - NP36N055SLE-AZ
NP36N055SLE-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NP36N055SLE-AZ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 36 A;
Datasheet NP36N055SLE-AZ Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 36 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): 120 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 36 A
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FDS3672 by Onsemi

FDS3672

Onsemi

FDS3672 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has an EAS of 416mJ and 0.023 ohm RDS(on).
IRF5305STRLPBF by International Rectifier

IRF5305STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Case Connection: DRAIN;
IRFZ44NLPBF by Infineon Technologies

IRFZ44NLPBF

Infineon Technologies

IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.
CSD19536KTT by Texas Instruments

CSD19536KTT

Texas Instruments

CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
IRF7416TRPBF-1 by Infineon Technologies

IRF7416TRPBF-1

Infineon Technologies

Infineon's IRF7416TRPBF-1 is a P-CHANNEL FET with 10A max drain current and 2.5W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems operating up to 150°C.
FDBL86062-F085 by Onsemi

FDBL86062-F085

Onsemi

FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
SI7252DP-T1-GE3 by Vishay Intertechnology

SI7252DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7252DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 80A max pulsed drain current and 0.017 ohm max drain-source resistance. Its small outline package and matte tin finish make it suitable for surface mount designs.
IXTA96P085T by IXYS Corporation

IXTA96P085T

IXYS Corporation

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
SQJ431EP-T1_GE3 by Vishay Intertechnology

SQJ431EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ431EP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 40A IDM, and 0.221 ohm RDS(ON). Ideal for power applications requiring high drain current and low on-resistance in a small outline package.
IRF540SPBF by Vishay Siliconix

IRF540SPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
SI4559ADY-T1-GE3 by Vishay Intertechnology

SI4559ADY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4559ADY-T1-GE3 is a Power FET with N/P-channel, 2 elements, and built-in diode. Ideal for switching applications, it has a max pulsed drain current of 20A and max power dissipation of 3.4W. With a breakdown voltage of 60V and operating temp up to 150°C, it offers reliable performance in various electronic circuits.
VNB35N07-E by STMicroelectronics

VNB35N07-E

STMicroelectronics

STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
IRF640NLPBF by Infineon Technologies

IRF640NLPBF

Infineon Technologies

IRF640NLPBF by Infineon Technologies is a N-CHANNEL FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE at up to 175°C.
IRF3205LPBF by International Rectifier

IRF3205LPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
IRF7493TRPBF by Infineon Technologies

IRF7493TRPBF

Infineon Technologies

Infineon's IRF7493TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 74A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.015 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has a max power dissipation of 2.5W at 150°C.
IRFP260NPBF by Infineon Technologies

IRFP260NPBF

Infineon Technologies

IRFP260NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a 300W Power Dissipation, -55 to 175 °C Operating Temp, and 0.04 ohm On Resistance.
IRLR2908TRPBF by International Rectifier

IRLR2908TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
IRFL9014TRPBF by International Rectifier

IRFL9014TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
FDD4141-F085 by Onsemi

FDD4141-F085

Onsemi

FDD4141-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0123 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures from -55 to 150 °C.
G2R1000MT17J by Genesic Semiconductor

G2R1000MT17J

Genesic Semiconductor

G2R1000MT17J by Genesic Semiconductor is a N-CHANNEL FET with 1700V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 8A and EAS of 45mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and SILICON CARBIDE element material, it offers high performance in various power applications.