Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NP40N055NHE |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Style (Meter): IN-LINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | NP40N055NHE Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 40 A |
| Maximum Pulsed Drain Current (IDM): | 100 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .023 ohm |
| Avalanche Energy Rating (EAS): | 44 mJ |
| JEDEC-95 Code: | TO-262AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 55 V |
| Qualification: | Not Qualified |
