Renesas Electronics - NP82N055PUG-E2-AZ

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NP82N055PUG-E2-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP82N055PUG-E2-AZ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 82 A;
Datasheet NP82N055PUG-E2-AZ Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 143 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 82 A
Maximum Drain Current (Abs) (ID): 82 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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