RJH65T04BDPM-A0#T2 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	RJH65T04BDPM-A0#T2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 60 A; Terminal Position: SINGLE;
Datasheet	RJH65T04BDPM-A0#T2 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	60 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	7 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	195 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	65 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	60 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Maximum Collector-Emitter Voltage:	650 V
Maximum Gate-Emitter Voltage:	30 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.95 V

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