Renesas Electronics - RJK0214DPA-00-J53

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RJK0214DPA-00-J53 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK0214DPA-00-J53
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Minimum DS Breakdown Voltage: 25 V; Operating Mode: ENHANCEMENT MODE;
Datasheet RJK0214DPA-00-J53 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 60 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals: 7
Maximum Power Dissipation (Abs): 35 W
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-XQFP-N7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0137 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 45 A
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