Renesas Electronics - RJK0222DNS-00-J5

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RJK0222DNS-00-J5 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK0222DNS-00-J5
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Minimum DS Breakdown Voltage: 25 V; Maximum Operating Temperature: 150 Cel;
Datasheet RJK0222DNS-00-J5 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 56 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 7
Maximum Power Dissipation (Abs): 10 W
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-XQFP-N7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0137 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 16 A
Peak Reflow Temperature (C): NOT SPECIFIED
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