Renesas Electronics - RJK2017DPP-M0#T2

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RJK2017DPP-M0#T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK2017DPP-M0#T2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .047 ohm; No. of Elements: 1;
Datasheet RJK2017DPP-M0#T2 Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 45 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum DS Breakdown Voltage: 200 V
Maximum Power Dissipation (Abs): 30 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 45 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .047 ohm
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