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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJK2017DPP-M0#T2 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .047 ohm; No. of Elements: 1; |
| Datasheet | RJK2017DPP-M0#T2 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 45 A |
| Sub-Category: | FET General Purpose Powers |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum DS Breakdown Voltage: | 200 V |
| Maximum Power Dissipation (Abs): | 30 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 45 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .047 ohm |
