Renesas Electronics - RJK2057DPA-00#J0

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RJK2057DPA-00#J0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK2057DPA-00#J0
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet RJK2057DPA-00#J0 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 40 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 5
Maximum Power Dissipation (Abs): 30 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .085 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 20 A
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