Renesas Electronics - RJP30H1DPD-00-J2

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RJP30H1DPD-00-J2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP30H1DPD-00-J2
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Threshold Voltage: 5 V; Maximum Collector-Emitter Voltage: 360 V;
Datasheet RJP30H1DPD-00-J2 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Maximum Power Dissipation (Abs): 40 W
Maximum Collector-Emitter Voltage: 360 V
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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