Renesas Electronics - RJP4010AGE-00-P5

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RJP4010AGE-00-P5 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP4010AGE-00-P5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Gate-Emitter Voltage: 6 V; Package Body Material: PLASTIC/EPOXY;
Datasheet RJP4010AGE-00-P5 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 1.2 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.6 W
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-C8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 6 V
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