Renesas Electronics - RJP60D0DPE-00-J3

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RJP60D0DPE-00-J3 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP60D0DPE-00-J3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 122 W; Maximum Collector Current (IC): 45 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet RJP60D0DPE-00-J3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 45 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Nominal Turn Off Time (toff): 160 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 122 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 55 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Other Names: RJP60D0DPE00J3
RJP60D0DPE-00#J3TR
RJP60D0DPE-00#J3CT
RJP60D0DPE-00#J3DKR
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
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