Renesas Electronics - RJP65S04DWT-80#X0

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RJP65S04DWT-80#X0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP65S04DWT-80#X0
Description N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 150 Cel;
Datasheet RJP65S04DWT-80#X0 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.8 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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