Renesas Electronics - TBB1010

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;

Broadcom's ATF-36163-BLKG is an N-channel RF FET with a 3V DS breakdown voltage, 9.4 dB power gain, and operates in depletion mode. Ideal for amplifier applications in the Ku band, it features a small outline package with Gull Wing terminals and high electron mobility technology. With a max operating temperature of 150°C and 0.18W power dissipation, this transistor offers reliable performance in various RF signal processing systems.

BF245ZL1 by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. This THROUGH-HOLE transistor has a max ID of 0.1A and comes in a CYLINDRICAL package shape.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 10 V; Terminal Position: DUAL; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Terminals: 3; Package Shape: ROUND;

RF Small Signal Field-Effect Transistors;

BF245BRL by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. This SINGLE configuration transistor has a max ID of 0.1A and comes in a CYLINDRICAL package with TIN LEAD finish.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): .03 A; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; Terminal Finish: TIN;

BF908R-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in dual gate depletion mode, and supports ultra-high frequency bands. Its compact surface mount design ensures efficient performance in various electronic circuits.

BF904R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Additional Features: LOW NOISE; Maximum Drain Current (ID): .03 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: SILICON; Highest Frequency Band: KU BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4; Maximum Feedback Capacitance (Crss): 45 pF;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .02 A; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Maximum Feedback Capacitance (Crss): .03 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;