TBB1012MMTL-E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	TBB1012MMTL-E
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Feedback Capacitance (Crss): 1.5 pF; Qualification: Not Qualified;
Datasheet	TBB1012MMTL-E Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.03 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Minimum Power Gain (Gp):	15 dB
Maximum Feedback Capacitance (Crss):	1.5 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	6 V
Qualification:	Not Qualified
Additional Features:	LOW NOISE
Maximum Drain Current (Abs) (ID):	.03 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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