Renesas Electronics - UPA1910TE-T2-AT

FDC604P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 5.5A.

NUD3124DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. Operating in enhancement mode, it has a max ID of 0.15A and RDS(on) of 1.4 ohm. Ideal for switching applications due to its small outline package style and temp rating of 150°C.

SI4925DDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 2 elements and built-in diode. It operates in enhancement mode for switching applications, with max drain current of 8A and min DS breakdown voltage of 30V. This small outline transistor has a max power dissipation of 5W, operating temperature range from -55 to 150°C, and matte tin terminal finish.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Elements: 1; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 60 V;

ROHM BSS138WT106 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.31A ID, and 3 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. With Gull Wing terminals and small outline package, it can handle up to 0.3W power dissipation.

FDS6681Z by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 20A max Drain Current. Operating in ENHANCEMENT MODE, it has a max Power Dissipation of 2.5W and 0.0046 ohm Drain-Source On Resistance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 10 ohm; Transistor Application: SWITCHING; No. of Terminals: 3;

NXP Semiconductors' BSS84AKM,315 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a chip carrier package style. Operating at up to 150°C, it has an 8.5 ohm max drain-source on resistance.

Small Signal Field-Effect Transistors;

T2N7002BK,LM(T by Toshiba is a N-CHANNEL FET with 60V DS breakdown voltage and 0.4A ID. Ideal for switching applications, it features a built-in diode and resistor in a small outline package. Operating in enhancement mode, it has 1W power dissipation and 1.75 ohm max on-resistance.

Infineon's BSS670S2LH6327XTSA1 is a N-CHANNEL FET with 55V DS breakdown voltage, 0.54A ID, and 0.825 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.

Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.

FDC6420C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 3A, on-resistance of 0.07 ohm, and operates in enhancement mode for switching applications. This MOSFET comes in a small outline package with matte tin finish, suitable for surface mount assembly at up to 260°C peak reflow temp.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

BSS138W-TP by Micro Commercial Components is a small signal N-channel FET with a min DS breakdown voltage of 50V. It is commonly used for switching applications due to its single configuration with built-in diode and surface mount capability.

NTS4001NT1G by Onsemi is a small signal N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.27A, and max power dissipation of 0.33W. With an operating temperature range from -55 to 150°C, this MOSFET is suitable for various electronic devices requiring efficient power management in compact designs.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .2 A;