UPA2562T1H-T2-AT by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA2562T1H-T2-AT
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Drain Current (Abs) (ID): 4.5 A; Package Shape: RECTANGULAR;
Datasheet	UPA2562T1H-T2-AT Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.5 A
Maximum Pulsed Drain Current (IDM):	18 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Pure Tin (Sn)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.07 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	4.5 A

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