Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPA2600T1R-E2-AX |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Drain-Source On Resistance: .0191 ohm; |
| Datasheet | UPA2600T1R-E2-AX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 7 A |
| Sub-Category: | FET General Purpose Powers |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| JESD-609 Code: | e4 |
| Minimum DS Breakdown Voltage: | 20 V |
| Maximum Power Dissipation (Abs): | 2.4 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 7 A |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .0191 ohm |









