Renesas Electronics - UPA2650T1E-E1-AT

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UPA2650T1E-E1-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2650T1E-E1-AT
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain Current (Abs) (ID): 3.8 A; Maximum Drain Current (ID): 3.8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet UPA2650T1E-E1-AT Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.1 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.8 A
Maximum Drain Current (Abs) (ID): 3.8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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