Renesas Electronics - UPA2736GR-E2-AX

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UPA2736GR-E2-AX by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2736GR-E2-AX
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 30 V;
Datasheet UPA2736GR-E2-AX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 140 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0135 ohm
Avalanche Energy Rating (EAS): 19.6 mJ
Maximum Feedback Capacitance (Crss): 1450 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 30 V
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