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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPA2766T1A-E2-AY |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; JESD-609 Code: e3; |
| Datasheet | UPA2766T1A-E2-AY Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
UPA2766T1A-E2-AYTR UPA2766T1AE2AY UPA2766T1A-E2-AYDKR UPA2766T1A-E2-AYCT |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 130 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Power Dissipation (Abs): | 83 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 130 A |
| Maximum Drain-Source On Resistance: | .00088 ohm |









