UPA502CT-T1-AT by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA502CT-T1-AT
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: R-PDSO-G5; Maximum Drain Current (ID): .1 A;
Datasheet	UPA502CT-T1-AT Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	2 pF
Maximum Drain Current (ID):	.1 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Power Dissipation Ambient:	.3 W
Maximum Drain-Source On Resistance:	2.7 ohm

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