ROHM - BC848BHZGT116

  1. Home
  2. ROHM - BC848BHZGT116
BC848BHZGT116 by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number BC848BHZGT116
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;
Datasheet BC848BHZGT116 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2907A by Texas Instruments

2N2907A

Texas Instruments

2N2907A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.4W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on time (45ns) and high transition frequency (200MHz).
MMBTA42LT1G by Onsemi

MMBTA42LT1G

Onsemi

MMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package makes it suitable for surface mount designs requiring a single configuration.
MMBT4401LT1G by Onsemi

MMBT4401LT1G

Onsemi

MMBT4401LT1G by Onsemi is a NPN BJT transistor for switching applications. With a VCEsat of 0.75V, hFE of 40, and IC of 0.6A, it operates at temperatures from -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BC817-25 by Continental Device India

BC817-25

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N3906 by Jiangsu Changjiang Electronics Technology

2N3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
BC817-40W-7 by Diodes Incorporated

BC817-40W-7

Diodes Incorporated

BC817-40W-7 by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a 0.2W power dissipation in a small outline package suitable for surface mount technology.
2N2907A by Asi Semiconductor

2N2907A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
PIMN31,115 by NXP Semiconductors

PIMN31,115

NXP Semiconductors

PIMN31,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.42W, and operates at temperatures up to 150°C. Ideal for switching applications in small outline packages with gull wing terminals.
FMMT493TA by Diodes Incorporated

FMMT493TA

Diodes Incorporated

FMMT493TA by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 1A, and min DC current gain of 20. With a package style of small outline and surface mount capability, it operates up to 150°C and has a transition frequency of 150MHz.
BC547C by Rectron

BC547C

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
BC817DS,115 by NXP Semiconductors

BC817DS,115

NXP Semiconductors

BC817DS,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and 6 terminals. It has a max power dissipation of 0.37W, hFE of 40, and operates up to 150°C. Ideal for switching applications due to its small outline package style and high transition frequency of 100MHz.
2N2907A by Baneasa S A

2N2907A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Terminal Position: BOTTOM;
2N2222A by Microsemi

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
MMBT3904 by Lite-on Semiconductor

MMBT3904

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
JANTX2N2222A by Raytheon Semiconductor

JANTX2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Terminal Form: WIRE;
BC547C by Vishay Semiconductors

BC547C

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
MMBT2222A by Micro Commercial Components

MMBT2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
MMBT3904 by Panjit International

MMBT3904

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JESD-609 Code: e3;
MMBT3904 by Weitronic Enterprise

MMBT3904

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
ULN2803AFWG(5,EL,M) by Toshiba

ULN2803AFWG(5,EL,M)

Toshiba

Toshiba's ULN2803AFWG(5,EL,M) is an NPN BJT with 8 Darlington banks. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, this surface-mount transistor features built-in diodes and resistors in a small outline package.