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| Manufacturer | ROHM |
|---|---|
| Manufacturer's Part Number | RQ7E100ATTCR |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | RQ7E100ATTCR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 10 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 1.5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .0148 ohm |
| Avalanche Energy Rating (EAS): | 72 mJ |
| Maximum Feedback Capacitance (Crss): | 335 pF |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Drain Current (Abs) (ID): | 10 A |
