ROHM - SCT2H12NZGC11

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SCT2H12NZGC11 by ROHM

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Manufacturer ROHM
Manufacturer's Part Number SCT2H12NZGC11
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; Maximum Pulsed Drain Current (IDM): 9.2 A;
Datasheet SCT2H12NZGC11 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.7 A
Maximum Pulsed Drain Current (IDM): 9.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 1700 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 1.5 ohm
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