SCT3080KLHRC11 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	SCT3080KLHRC11
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .104 ohm;
Datasheet	SCT3080KLHRC11 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	31 A
Maximum Pulsed Drain Current (IDM):	77 A
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	165 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.104 ohm
Maximum Feedback Capacitance (Crss):	35 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	1200 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	31 A
Peak Reflow Temperature (C):	265

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