ROHM - SCT3120ALGC11

  1. Home
  2. ROHM - SCT3120ALGC11
SCT3120ALGC11 by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number SCT3120ALGC11
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 52 A; Minimum DS Breakdown Voltage: 650 V; Package Style (Meter): FLANGE MOUNT;
Datasheet SCT3120ALGC11 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
JEDEC-95 Code: TO-247
Maximum Pulsed Drain Current (IDM): 52 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 265
Maximum Drain-Source On Resistance: .156 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRFZ44NPBF by Infineon Technologies

IRFZ44NPBF

Infineon Technologies

IRFZ44NPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 94W and operates in ENHANCEMENT MODE at up to 175°C.
FDN5630-F095 by Fairchild Semiconductor

FDN5630-F095

Fairchild Semiconductor

FDN5630-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.7A max drain current and 0.5W max power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or battery-operated devices. Operating at up to 150°C, it features surface mount configuration and metal-oxide semiconductor technology for enhanced performance.
FDB3632 by Onsemi

FDB3632

Onsemi

Onsemi's FDB3632 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 12A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 175 °C with an EAS of 337 mJ.
NTD2955T4G by Onsemi

NTD2955T4G

Onsemi

NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
2N7002BKMB,315 by NXP Semiconductors

2N7002BKMB,315

NXP Semiconductors

2N7002BKMB,315 by NXP Semiconductors is a single N-channel power FET with an operating mode of enhancement. It has a max drain current of 0.45A and a max power dissipation of 0.715W. This MOSFET is suitable for applications requiring high efficiency and temperature resistance up to 150°C.
FQD16N25CTM by Fairchild Semiconductor

FQD16N25CTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Avalanche Energy Rating (EAS): 432 mJ; Moisture Sensitivity Level (MSL): 1;
IRF540NPBF by Infineon Technologies

IRF540NPBF

Infineon Technologies

IRF540NPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 185mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE.
SPW20N60C3FKSA1 by Infineon Technologies

SPW20N60C3FKSA1

Infineon Technologies

SPW20N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 62.1A IDM, and 0.19 ohm RDS(on). It is used in power applications due to its 690mJ EAS rating, operating at up to 150°C.
ZXMP6A13GTA by Diodes Incorporated

ZXMP6A13GTA

Diodes Incorporated

ZXMP6A13GTA by Diodes Inc. is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 2.3A.
IRF4905STRLPBF by International Rectifier

IRF4905STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Terminal Finish: MATTE TIN OVER NICKEL; Terminal Position: SINGLE;
IRF3205ZSTRLPBF by International Rectifier

IRF3205ZSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (Abs) (ID): 110 A; No. of Terminals: 2;
FDB3632 by Fairchild Semiconductor

FDB3632

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
IRF9530NSTRLPBF by Infineon Technologies

IRF9530NSTRLPBF

Infineon Technologies

IRF9530NSTRLPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, 56A IDM, and 0.2 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 175°C Max Operating Temp.
IRFR540ZTRPBF by Infineon Technologies

IRFR540ZTRPBF

Infineon Technologies

IRFR540ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 140A and EAS of 39mJ, operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals offers 0.0285 ohm RDS(ON) and 91W Pd max.
IRF4905PBF by Infineon Technologies

IRF4905PBF

Infineon Technologies

IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
BSC067N06LS3GATMA1 by Infineon Technologies

BSC067N06LS3GATMA1

Infineon Technologies

BSC067N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 47mJ EAS, and 0.0067 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
CSD19534Q5AT by Texas Instruments

CSD19534Q5AT

Texas Instruments

CSD19534Q5AT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It is used for switching applications, has a max IDM of 137A and an EAS rating of 55mJ.
IRFL9014TRPBF by International Rectifier

IRFL9014TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
G3R450MT17D by Genesic Semiconductor

G3R450MT17D

Genesic Semiconductor

Power Field-Effect Transistors;
IRF3710STRLPBF by International Rectifier

IRF3710STRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; JESD-30 Code: R-PSSO-G2;