UT6J3TCR1 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	UT6J3TCR1
Description	P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 12 A; Package Shape: SQUARE;
Datasheet	UT6J3TCR1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	12 A
Surface Mount:	YES
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.085 ohm
Avalanche Energy Rating (EAS):	.6 mJ
Other Names:	846-UT6J3TCR1TR 846-UT6J3TCR1DKR 846-UT6J3TCR1CT
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED

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