Samsung - IRF243

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IRF243 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRF243
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Maximum Drain Current (ID): 16 A;
Datasheet IRF243 Datasheet
In Stock125
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 16 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 125 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 16 A
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Pricing (USD)

Qty. Unit Price Ext. Price
125 $1.580 $197.500

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