Samsung - IRF433

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IRF433 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRF433
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet IRF433 Datasheet
In Stock458
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 75 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 4 A
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Pricing (USD)

Qty. Unit Price Ext. Price
458 $1.290 $590.820

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