Samsung - IRF740A

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IRF740A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRF740A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Maximum Turn Off Time (toff): 235 ns;
Datasheet IRF740A Datasheet
In Stock78,984
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 105 ns
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 40 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 235 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 134 W
Maximum Drain-Source On Resistance: .55 ohm
Avalanche Energy Rating (EAS): 457 mJ
Maximum Feedback Capacitance (Crss): 95 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 10 A
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Pricing (USD)

Qty. Unit Price Ext. Price
78,984 $0.910 $71,875.440

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