Samsung - IRF9Z24

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IRF9Z24 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRF9Z24
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
Datasheet IRF9Z24 Datasheet
In Stock59,643
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 98 ns
Maximum Drain Current (ID): 9.7 A
Maximum Pulsed Drain Current (IDM): 39 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 56 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 40 W
Maximum Drain-Source On Resistance: .28 ohm
Avalanche Energy Rating (EAS): 4.2 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 11 A
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