Samsung - IRFA1Z3

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IRFA1Z3 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFA1Z3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .4 A;
Datasheet IRFA1Z3 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .4 A
Maximum Drain Current (Abs) (ID): .4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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