IRFP350A by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	IRFP350A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 495 mJ; Package Style (Meter): FLANGE MOUNT;
Datasheet	IRFP350A Datasheet
In Stock	342

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	495 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	17 A
Maximum Pulsed Drain Current (IDM):	68 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	400 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.3 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
342	$0.813	$278.046

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