Samsung - IRFR320

IRFR320 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFR320
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Turn On Time (ton): 35 ns; Terminal Position: SINGLE;
Datasheet IRFR320 Datasheet
In Stock22,221
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 35 ns
Maximum Drain Current (ID): 3.1 A
Maximum Pulsed Drain Current (IDM): 11 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 42 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 65 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 42 W
Maximum Drain-Source On Resistance: 1.8 ohm
Avalanche Energy Rating (EAS): 16 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.1 A
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Pricing (USD)

Qty. Unit Price Ext. Price
22,221 $1.760 $39,108.960

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