Samsung - IRFR9014-T1

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IRFR9014-T1 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFR9014-T1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V;
Datasheet IRFR9014-T1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 80.2 ns
Maximum Drain Current (ID): 5.3 A
Maximum Pulsed Drain Current (IDM): 21 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 79 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 25 W
Maximum Drain-Source On Resistance: .5 ohm
Avalanche Energy Rating (EAS): 240 mJ
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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