Samsung - IRFU411

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IRFU411 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFU411
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .5 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
Datasheet IRFU411 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 450 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 10 ohm
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