
Image shown is a representation only.
Manufacturer | Samsung |
---|---|
Manufacturer's Part Number | IRFU9222 |
Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON; No. of Terminals: 3; |
Datasheet | IRFU9222 Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 2.8 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | 2.4 ohm |