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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4E660812E-JP60T |
| Description | EDO DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: SOJ; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4E660812E-JP60T Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .001 Amp |
| Organization: | 8MX8 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 100 mA |
| No. of Terminals: | 32 |
| No. of Words: | 8388608 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Technology: | CMOS |
| JESD-30 Code: | R-PDSO-J32 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | J BEND |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | SOJ |
| Input/Output Type: | COMMON |
| Memory Density: | 67108864 bit |
| Self Refresh: | YES |
| Memory IC Type: | EDO DRAM |
| Minimum Operating Temperature: | -40 Cel |
| Memory Width: | 8 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | SOJ32,.44 |
| Refresh Cycles: | 8192 |
| Maximum Access Time: | 60 ns |
| No. of Words Code: | 8M |
| Nominal Supply Voltage / Vsup (V): | 3.3 |
| Terminal Pitch: | 1.27 mm |
| Temperature Grade: | INDUSTRIAL |
| Power Supplies (V): | 3.3 |
