Samsung - K4R881869D-FCCS9

  1. Home
  2. Samsung - K4R881869D-FCCS9
K4R881869D-FCCS9 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K4R881869D-FCCS9
Description RAMBUS DRAM;
Datasheet K4R881869D-FCCS9 Datasheet
NAME DESCRIPTION
Memory IC Type: RAMBUS DRAM
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

W631GU6NB11I by Winbond Electronics

W631GU6NB11I

Winbond Electronics

Winbond Electronics' W631GU6NB11I is a DDR3L DRAM with 64MX16 organization, operating at up to 933 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
MT41K128M16JT-125AIT:K by Micron Technology

MT41K128M16JT-125AIT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AIT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16LY-062EAUT:ETR by Micron Technology

MT40A512M16LY-062EAUT:ETR

Micron Technology

MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.
M12L2561616A-6TG2A by Elite Semiconductor Microelectronics Technologyinc

M12L2561616A-6TG2A

Elite Semiconductor Microelectronics Technologyinc

M12L2561616A-6TG2A by Elite Semiconductor is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT47H32M16NF-25EIT:HTR by Micron Technology

MT47H32M16NF-25EIT:HTR

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
MT41K256M16HA-125 by Micron Technology

MT41K256M16HA-125

Micron Technology

Micron Technology's MT41K256M16HA-125 is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in compact devices due to its thin profile and fine pitch package style.
MT41K128M16HA-15E:D by Micron Technology

MT41K128M16HA-15E:D

Micron Technology

Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT48LC32M16A2TG-75:CTR by Micron Technology

MT48LC32M16A2TG-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
S27KS0642GABHB020 by Cypress Semiconductor

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
MT46H128M16LFB7-6IT:B by Micron Technology

MT46H128M16LFB7-6IT:B

Micron Technology

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C512M16D3LC-12BIN by Alliance Memory

AS4C512M16D3LC-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
K4S281632O-LI75 by Samsung

K4S281632O-LI75

Samsung

Samsung's K4S281632O-LI75 is an 8MX16 DRAM with a memory density of 134217728 bit. It operates at a max clock frequency of 133 MHz and has a max access time of 5.4 ns. Ideal for industrial applications requiring high-speed data processing in compact devices.
NT5CC256M16EP-EK by Nanya Technology

NT5CC256M16EP-EK

Nanya Technology

NT5CC256M16EP-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and low power consumption in a compact grid array package style.
W631GG6NB-12 by Winbond Electronics

W631GG6NB-12

Winbond Electronics

Winbond Electronics' W631GG6NB-12 is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz. It features a 96-terminal grid array package suitable for synchronous applications. With a low standby current of 0.04 Amp and common I/O type, it's ideal for high-speed memory requirements in various electronic devices.
MTA9ADF1G72AZ-3G2E1 by Micron Technology

MTA9ADF1G72AZ-3G2E1

Micron Technology

Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
MT41K256M16TW-107:P by Micron Technology

MT41K256M16TW-107:P

Micron Technology

Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT47H64M16NF-25EIT:M by Micron Technology

MT47H64M16NF-25EIT:M

Micron Technology

MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H128M16RT-25EXIT:C by Micron Technology

MT47H128M16RT-25EXIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EXIT:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.
MT41K512M16HA-107AIT:A by Micron Technology

MT41K512M16HA-107AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-107AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in automotive or industrial settings.
M378T6553EZS-CE6 by Samsung

M378T6553EZS-CE6

Samsung

Samsung M378T6553EZS-CE6 DDR DRAM Module features 64MX64 organization, operates at 333 MHz with 1.8V supply voltage. Ideal for applications requiring high-speed synchronous memory in microelectronic assemblies.