
Image shown is a representation only.
Manufacturer | Samsung |
---|---|
Manufacturer's Part Number | K4T1G044QC-ZCF7T |
Description | DDR2 DRAM; No. of Terminals: 60; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; |
Datasheet | K4T1G044QC-ZCF7T Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Organization: | 256MX4 |
Output Characteristics: | 3-STATE |
Sub-Category: | DRAMs |
Surface Mount: | YES |
Maximum Supply Current: | 300 mA |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 60 |
Maximum Clock Frequency (fCLK): | 400 MHz |
No. of Words: | 268435456 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, FINE PITCH |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B60 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Package Code: | FBGA |
Moisture Sensitivity Level (MSL): | 3 |
Input/Output Type: | COMMON |
Memory Density: | 1073741824 bit |
Sequential Burst Length: | 4,8 |
Memory IC Type: | DDR2 DRAM |
JESD-609 Code: | e1 |
Memory Width: | 4 |
Qualification: | Not Qualified |
Package Equivalence Code: | BGA60,9X11,32 |
Refresh Cycles: | 8192 |
Interleaved Burst Length: | 4,8 |
Maximum Access Time: | .4 ns |
No. of Words Code: | 256M |
Nominal Supply Voltage / Vsup (V): | 1.8 |
Peak Reflow Temperature (C): | 260 |
Terminal Pitch: | .8 mm |
Power Supplies (V): | 1.8 |