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Manufacturer | Samsung |
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Manufacturer's Part Number | SFF9240 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain-Source On Resistance: .5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | SFF9240 Datasheet |
In Stock | 612 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 385 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 7.6 A |
Maximum Pulsed Drain Current (IDM): | 30 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .5 ohm |