Samsung - SSI6N70A

SSI6N70A by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number SSI6N70A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Package Style (Meter): IN-LINE; Maximum Pulsed Drain Current (IDM): 24 A;
Datasheet SSI6N70A Datasheet
In Stock715
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 582 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 700 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 130 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 6 A
Maximum Drain-Source On Resistance: 1.8 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
715 - -

Popular Products

Category Top Products